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Dell EMC 1.92TB SAS 12G RI SFF 2.5" SSD Samsung PM1643 MZ-ILT19A 0F0VFY F0VFY

Dell EMC 1.92TB SAS 12G RI SFF 2.5" SSD Samsung PM1643 MZ-ILT19A 0F0VFY F0VFY

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SKU F0VFY
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  • Specifications
  • Description
Manufacturer Part Number F0VFY, 0F0VFY, MZ-ILT19A
Manufacturer Samsung
Condition Refurbished
Standard Warranty 90 Day Replacement Warranty
Item Category Solid State Drive (SSD)
Model PM1643
Form Factor 2.5-inch SFF
Interface SAS 12Gb/s
External Interfaces
Storage Capacity 1.92 TB
Transfer Rate 12 Gb/s
Network Management Type
Processor Type
Clock Speed
Number of Cores
Cache
Socket Type SAS
TDP
Compatible Port SAS Backplane
Number of Ports 2 (Dual-port SAS)
CPU Type
HDD Form Factor
HDD Interface
HDD Rotation Speed
HDD Storage Capacity
HDD Transfer Rate
Memory Bus Speed
Memory Capacity Per Module
Memory Features
Memory Form Factor
Memory Kit Brand
Memory Kit Breakdown
Memory Kit Speed
Memory Kit Technology
Memory Kit Total Capacity
Memory Kit Voltage
Memory Number of Modules
Memory Number of Pins
Memory Total Capacity
Memory Type
Network Ports
Processor Model
SSD Capacity
SSD Interface
SSD Storage Capacity
SSD Transfer Rate
SSD Type

Dell EMC 1.92TB SAS 12G RI SFF 2.5" SSD – Samsung PM1643 (0F0VFY / F0VFY)

The Dell EMC 1.92TB SAS SSD, based on the Samsung PM1643 platform, is an enterprise-class Read-Intensive (RI) solid-state drive designed for server and storage array environments with heavy read workloads. Featuring 12Gb/s dual-port SAS connectivity, enterprise endurance, and advanced data-protection features, this drive delivers consistent performance and high availability.

Part Number Identification

All part numbers below refer to the same base drive, with differences reflecting OEM branding or inventory classification:

  • Dell EMC Part Numbers:

    • 0F0VFY

    • F0VFY

  • Samsung Model / Part Numbers:

    • MZ-ILT19A

    • MZILT1T9HAJQAD3

Core Technical Specifications

  • Capacity: 1.92TB

  • Workload Class: Read-Intensive (RI)

  • Interface: SAS 12Gb/s (dual-port)

  • Form Factor: 2.5" SFF, 15mm height

  • NAND Type: Samsung V-NAND TLC

Performance

  • Sequential Read Speed: Up to 2,100 MB/s

  • Sequential Write Speed: Up to 1,800 MB/s

  • Random Read (4KB): Up to 400,000 IOPS

  • Random Write (4KB): Up to 46,000 IOPS

  • DRAM Cache: 40GB

Endurance & Reliability

  • Endurance Rating: 1 DWPD

  • Total Bytes Written (TBW): 5,466 TB (5-year equivalent)

  • Idle Power Consumption: ~5 W

Security & Data Protection

  • Power Loss Protection (PLP)

  • Dual-port SAS for high availability

  • TCG Enterprise AES 256-bit encryption (SKU dependent)

  • Digitally Signed (DS) firmware

Workload Classification

  • Official Classification: Read-Intensive (RI)

  • Use Case: Optimized for workloads where the drive is written once per day or less, including read-heavy virtualization, databases, and enterprise storage arrays